document number: 94089 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 28-may-08 1 fast soft recovery rectifier diode, 10 a 10etf..fppbf soft recovery series vishay high power products features/description the 10etf06fppbf fast so ft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. the glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. the fully isolated package (v ins = 2500 v rms ) is ul e78996 approved. this product series has been designed and qualified for industrial level and lead (pb)-free. applications ? output rectification and freewheeling in inverters, choppers and converters ? input rectifications where se vere restrictions on conducted emi should be met product summary v rrm 200 to 600 v v f at 10 a < 1.2 v t rr 50 ns to-220ac full-pak b as e c a thode 2 13 anode c a thode available rohs* compliant major ratings and characteristics symbol characteristics values units v rrm 200 to 600 v i f(av) sinusoidal waveform 10 a i fsm 150 t rr 1 a, 100 a/s 50 ns v f 10 a, t j = 25 c 1.2 v t j - 40 to 150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm at 150 c ma 10ETF02FPPBF 200 3 00 2 10etf04fppbf 400 500 10etf06fppbf 600 700 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 98 c, 180 conduction half sine wave 10 a maximum peak one cycle non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 150 10 ms sine pulse, no voltage reapplied 160 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 112.5 a 2 s 10 ms sine pulse, no voltage reapplied 160 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 1600 a 2 s * pb containing terminations are not rohs compliant, exemptions may apply
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94089 2 revision: 28-may-08 10etf..fppbf soft recovery series vishay high power products fast soft recovery rectifier diode, 10 a electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 10 a, t j = 25 c 1.2 v forward slope resistance r t t j = 150 c 2 3 .5 m threshold voltage v f(to) 0.85 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.1 ma t j = 150 c 3 .0 recovery characteristics parameter symbol test conditions values units reverse recovery time t rr i f at 10 apk 25 a/s 25 c 145 ns reverse recovery current i rr 2.75 a reverse recovery charge q rr 0. 3 2c snap factor s 0.6 i fm t rr dir dt i rm(rec) q rr t thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 40 to 150 c maximum thermal resistance junction to case r thjc dc operation 2.5 c/w maximum thermal resistance junction to ambient r thja 62 typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.5 approximate weight 2g 0.07 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to- 220ac full-pak (94/v0) 10etf06fp
document number: 94089 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 28-may-08 3 10etf..fppbf soft recovery series fast soft recovery rectifier diode, 10 a vishay high power products fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current 110 100 90 8 0 150 0 6 maximum allowable ca s e temperature (c) average forward current (a) 4 2 8 130 60 30 90 1 8 0 10 12 10etf.. s erie s r thjc (dc) = 2.5 c/w 140 120 120 ? cond u ction a ngle 110 100 90 150 0 1 0 maximum allowable ca s e temperature (c) average forward current (a) 6 2 1 2 130 60 30 1 8 0 16 1 8 10etf.. s erie s r thjc (dc) = 2.5 c/w 140 120 ? cond u ction period dc 4 8 14 90 120 4 0 16 0 maximum average forward power lo ss (w) average forward current (a) 8 10 10 10etf.. s erie s t j = 150 c 12 8 46 1 8 0 rm s limit cond u ction a ngle 2 2 6 14 60 30 90 120 ? 4 0 20 0 maximum average forward power lo ss (w) average forward current (a) 12 12 16 10etf.. s erie s t j = 150 c 16 8 ? cond u ction period dc 4 8 60 30 1 8 0 90 120 rm s limit 160 8 0 40 1 10 100 peak half s ine wave forward current (a) number of equal amplitude half cycle current pul s e s (n) 140 60 100 120 10etf.. s erie s initi a l t j = 150 c a t 60 hz 0.00 8 3 s a t 50 hz 0.0100 s at a ny r a ted lo a d condition a nd with r a ted v rrm a pplied following su rge. 1 8 0 8 0 40 0.01 0.1 1 peak half s ine wave forward current (a) pul s e train duration ( s ) 140 60 100 120 10etf.. s erie s initi a l t j = 150 c no volt a ge re a pplied r a ted v rrm re a pplied m a xim u m non-repetitive su rge c u rrent ver sus p u l s e tr a in d u r a tion. 160
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94089 4 revision: 28-may-08 10etf..fppbf soft recovery series vishay high power products fast soft recovery rectifier diode, 10 a fig. 7 - forward volt age drop characteristics fig. 8 - recovery time characteristics, t j = 25 c fig. 9 - recovery time characteristics, t j = 150 c fig. 10 - recovery charge characteristics, t j = 25 c fig. 11 - recovery char ge characteristics, t j = 150 c fig. 12 - recovery current characteristics, t j = 25 c 100 10 1 0.5 1.0 1.5 2.0 2.5 3.0 instantaneous forward current (a) instantaneous forward voltage (v) t j = 150 c t j = 25 c 10etf.. series 0.20 0.15 0 040 8 0 120 160 200 t rr - maximum rever s e recovery time ( s ) di/dt - rate of fall of forward current (a/ s ) 10etf.. s erie s t j = 25 c 0.05 0.10 i fm = 20 a i fm = 1 a i fm = 10 a i fm = 5 a i fm = 2 a 0.4 0.3 0 040 8 0 120 160 200 t rr - maximum rever s e recovery time ( s ) di/dt - rate of fall of forward current (a/ s ) 10etf.. s erie s t j = 150 c 0.1 0.2 i fm = 20 a i fm = 1 a i fm = 10 a i fm = 5 a i fm = 2 a 1.4 0.6 0 040 8 0 120 160 200 q rr - maximum rever s e recovery charge (c) di/dt - rate of fall of forward current (a/ s ) 10etf.. s erie s t j = 25 c 0.2 0.4 1.0 0. 8 1.2 i fm = 20 a i fm = 1 a i fm = 10 a i fm = 5 a i fm = 2 a 2.5 1.5 0 040 8 0 120 160 200 q rr - maximum rever s e recovery charge (c) di/dt - rate of fall of forward current (a/ s ) 10etf.. s erie s t j = 150 c 0.5 1.0 2.0 i fm = 20 a i fm = 1 a i fm = 10 a i fm = 5 a i fm = 2 a 15 9 0 040 8 0 120 160 200 i rr - maximum rever s e recovery current (a) di/dt - rate of fall of forward current (a/ s ) 10etf.. s erie s t j = 25 c 3 6 12 i fm = 20 a i fm = 1 a i fm = 10 a i fm = 5 a i fm = 2 a
document number: 94089 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 28-may-08 5 10etf..fppbf soft recovery series fast soft recovery rectifier diode, 10 a vishay high power products fig. 1 3 - recovery current characteristics, t j = 150 c fig. 14 - thermal impedance z thjc characteristics 20 12 0 040 8 0 120 160 200 i rr - maximum rever s e recovery current (a) di/dt - rate of fall of forward current (a/ s ) 10etf.. s erie s t j = 150 c 4 8 16 i fm = 20 a i fm = 1 a i fm = 10 a i fm = 5 a i fm = 2 a 0.1 1 10 10 0.0001 0.001 0.01 0.1 1 square wave pulse duration (s) z thjc - transient thermal impedance (c/w) single pulse 10etf.. series steady state value (dc operation) d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94089 6 revision: 28-may-08 10etf..fppbf soft recovery series vishay high power products fast soft recovery rectifier diode, 10 a ordering information table 1 - current rating (10 = 10 a) 2 - circuit configuration: e = single diode 3 - package: t = to-220ac 4 - type of silicon: f = fast soft recovery rectifier 5 - voltage code x 100 = v rrm 6 - full-pak 7 - none = standard production pbf = lead (pb)-free 02 = 200 v 04 = 400 v 06 = 600 v device code 5 13 24 67 10 e t f 06 fp pbf links to related documents dimensions http://www.vishay.com/doc?95005 part marking information http://www.vishay.com/doc?95009
outline dimensions www.vishay.com vishay semiconductors revision: 20-jul-11 1 document number: 95005 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters 5 0.5 3.3 3.1 5 0.5 0.9 0.7 2.54 typ. 2.54 typ. 10.6 10.4 3.7 3.2 7.31 6.91 0.61 0.38 2.85 2.65 2.8 2.6 1.4 1.3 10 4.8 4.6 16.0 15.8 16.4 15.4 (2 places) r 0.7 r 0.5 hole ? 3.4 3.1 typ. 1.15 1.05 13.56 13.05 lead assignments diode s 1 + 2 - cathode 3 - anode conforms to jedec outline to-220 full-pak
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